You are here: Welcome » RAND Corporation

Differences

This shows you the differences between two versions of the page.

Link to this comparison view

Both sides previous revisionPrevious revision
Both sides next revision
rand_corporation [2021/12/21 20:28]
liam
rand_corporation [2021/12/21 20:32] (current)
liam
Line 97: Line 97:
   * "...the growth rate has been achieved by a continual progression to increasingly more-dense complementary metal-oxide semiconductor (CMOS) chip fabrication technologies."   * "...the growth rate has been achieved by a continual progression to increasingly more-dense complementary metal-oxide semiconductor (CMOS) chip fabrication technologies."
   *  "Current commercial fabrication methods are already at the nanoscale, with nominal feature size of 90 nanometers and gate width of 50 nanometers, and approaches to scale down to 10 nanometers feature size are under research."   *  "Current commercial fabrication methods are already at the nanoscale, with nominal feature size of 90 nanometers and gate width of 50 nanometers, and approaches to scale down to 10 nanometers feature size are under research."
 +  * "However, by 2020, the continued reduction of feature size is likely to require nonconventional and hybrid methods; several different approaches (e.g., based on nanotubes, nanowires, and molecular switches) have been suggested and are being pursued."
Back to top